e-book Radio-Frequency Electronics: Circuits and Applications

Free download. Book file PDF easily for everyone and every device. You can download and read online Radio-Frequency Electronics: Circuits and Applications file PDF Book only if you are registered here. And also you can download or read online all Book PDF file that related with Radio-Frequency Electronics: Circuits and Applications book. Happy reading Radio-Frequency Electronics: Circuits and Applications Bookeveryone. Download file Free Book PDF Radio-Frequency Electronics: Circuits and Applications at Complete PDF Library. This Book have some digital formats such us :paperbook, ebook, kindle, epub, fb2 and another formats. Here is The CompletePDF Book Library. It's free to register here to get Book file PDF Radio-Frequency Electronics: Circuits and Applications Pocket Guide.

Frontiers in Massive Data Analysis

Radio receivers-- 8. Transmission lines-- Oscillators-- Phase lock loops and synthesizers-- Coupled-resonator bandpass filters-- Transformers and baluns-- Hybrid couplers-- Waveguide circuits-- Small-signal RF amplifiers-- Demodulators and detectors-- Television systems-- Antennas and radio wave propagation-- Radar systems-- Digital modulation techniques-- Modulation, noise, and information-- Amplifier and oscillator noise analysis-- The GPS navigation system-- Radio and radar astronomy-- Radio spectrometry-- S-parameter circuit analysis-- Power supplies-- RF test equipment-- Index.

It covers the fundamental principles applying to all radio devices, from wireless single-chip data transceivers to high-power broadcast transmitters. This new edition is extensively revised and expanded throughout, including additional chapters on radar, digital modulation, GPS navigation, and S-parameter circuit analysis. New worked examples and end-of-chapter problems are included to aid and test understanding of the topics covered, as well as numerous extra figures to provide a visual aid to learning.

Key topics covered include filters, amplifiers, oscillators, modulators, low-noise amplifiers, phase lock loops, transformers, waveguides, and antennas. Assuming no prior knowledge of radio electronics, this is a perfect introduction to the subject.

EEEN40150 Radio-Frequency Electronics

It is an ideal textbook for junior or senior courses in electrical engineering, as well as an invaluable reference for professional engineers in this area. Subject Radio circuits. Bibliographic information. Browse related items Start at call number: TK H34 The bias circuit can also provide voltage and current that are consistent across different parts and over temperature and process variations. Embodiments described herein include a voltage reference circuit implemented in GaAs to provide an output voltage component proportional to absolute temperature, the output voltage component being independent of Schottky diode variations.

Embodiments described herein also include a circuit assembly including a voltage reference circuit implemented in GaAs to provide an output voltage component proportional to absolute temperature, the output voltage component being independent of Schottky diode variations which is connected to a current mirror circuit configured to generate a bias voltage for inputting to a RF device.

In various embodiments, a mirror shut-off circuit configured to turn-off the current mirror circuit is also described. One innovative aspect of the disclosure is implemented in a voltage reference circuit, comprising: an enable circuit configured to receive an input signal; a bandgap voltage generator operatively associated with the enable circuit; a precision voltage generator operatively associated with the bandgap voltage generator to provide an output voltage component proportional to absolute temperature; and a mode-control circuit operatively associated with the bandgap voltage generator and configured to operate the bandgap voltage generator in a low power mode.

The output voltage component generated by the bandgap voltage generator can be independent of Schottky diode variations. In various implementations, the precision voltage generator can include a first bipolar transistor and a second bipolar transistor. The base of the second bipolar transistor can be connected to the base of the first bipolar transistor.

Michael Ossmann: Simple RF Circuit Design

The precision voltage generator can further include a field effect transistor FET. The source of the FET can be connected to the base of the first bipolar transistor and to the base of the second bipolar transistor. The collector of the first bipolar transistor can be connected to the gate of the FET. The voltage reference circuit can be implemented in a gallium arsenide GaAs semiconductor die.

In various embodiments, the semiconductor die can be incorporated onto a module or system where the semiconductor die is the only semiconductor die e. The system or module according to certain embodiments may include a GaAs semiconductor die e. One innovative aspect of the disclosure is implemented in an apparatus comprising: a voltage reference circuit configured to generate an output voltage component proportional to absolute temperature; and a current mirror circuit configured to receive a precision voltage from the voltage reference circuit that is independent of Schottky diode variations.

The current mirror circuit can be further configured to generate a bias voltage for inputting to a RF device.


  1. US9571139B2 - Reference circuits for biasing radio frequency electronics - Google Patents.
  2. Journey of the Sacred King Book III: My Fathers House.
  3. High Frequency Electronics;
  4. US9571139B2 - Reference circuits for biasing radio frequency electronics - Google Patents.
  5. Intercultural Experience and Education.

The bias voltage generator can be implemented in a GaAs semiconductor die. The GaAs semiconductor die including the bias voltage generator can be implemented in a semiconductor module. The mirror shut-off circuit can be configured to turn-off a current mirror circuit configured to receive a precision voltage from a voltage reference circuit that is configured to generate an output voltage component proportional to absolute temperature. The precision voltage can be independent of Schottky diode variations, the current mirror circuit being configured to generate a bias voltage for inputting to a RF device.

The base of the bipolar transistor and drain of the first FET current source can each be connected to an enable port. The mirror circuit can be configured to be turned off when a voltage equal to or less than approximately 1 V is applied to the enable port. Various embodiments described herein include a current mirror circuit assembly comprising: a current mirror circuit; and a mirror shut-off circuit including a first field effect transistor FET , a first FET current source including a second FET, and a second FET current source including a third FET.

Various embodiments described herein include a module comprising: a substrate for receiving a plurality of components; and a GaAs die situated on the substrate. The GaAs die can include a voltage reference circuit implemented to provide an output voltage component proportional to absolute temperature. The output voltage component can be independent of Schottky diode variations. The module can further comprise a current mirror circuit connected to the voltage reference circuit; a RF device connected to the current mirror circuit; and a switch situated on the substrate and connected to the GaAs die.

Various embodiments described herein include a semiconductor die comprising a voltage reference circuit to provide an output voltage component proportional to absolute temperature, the output voltage component being independent of Schottky diode variations; a current mirror circuit connected to the voltage reference circuit; and a RF device connected to the current mirror circuit.

In various embodiments, the semiconductor die includes a GaAs material system. Various implementations of the semiconductor die can further comprise a master enable circuit configured to enable or disable the voltage reference circuit. Various implementations of the semiconductor die can further comprise a current mirror logic circuit configured to enable or disable the current mirror circuit.

Various embodiments described herein include a semiconductor module comprising a GaAs die connected to a switch. The GaAs die can include a voltage reference circuit to provide an output voltage component proportional to absolute temperature, the output voltage component being independent of Schottky diode variations; a current mirror circuit connected to the voltage reference circuit; and a RF device connected to the current mirror circuit. Various embodiments described herein include a mobile device e. The semiconductor module can further include a current mirror circuit connected to the voltage reference circuit; and a RF device connected to the current mirror circuit.

The module is configured to condition the signal received from the transmitter and transmit the signal to the antenna. In various embodiments, the module can condition the signal received from the transmitter at least in part by amplifying the received signal. In various embodiments, the module has a smaller footprint as compared to previous designs and thus can advantageously reduce the size of the mobile device.

In various embodiments, the module may improve power efficiency and signal quality. The semiconductor module can include a single GaAs die. The semiconductor module need not include a complementary metal-oxide CMOS die. Other embodiments are also provided. Other systems, methods, features, and advantages of the invention will be or become apparent to one with skill in the art upon examination of the following figures and detailed description.

It is intended that all such additional systems, methods, features, and advantages be included within this description, be within the scope of the invention, and be protected by the accompanying claims. These and other features will now be described with reference to the drawings summarized above. The drawings and the associated descriptions are provided to illustrate embodiments and not to limit the scope of the disclosure or claims.

Radio-Frequency Electronics: Circuits and Applications

Throughout the drawings, reference numbers may be reused to indicate correspondence between referenced elements. In addition, where applicable, the first one or two digits of a reference numeral for an element can frequently indicate the figure number in which the element first appears. The features of the systems and methods will now be described with reference to the drawings summarized above.

Throughout the drawings, reference numbers are re-used to indicate correspondence between referenced elements. The drawings, associated descriptions, and specific embodiment are provided to illustrate embodiments of the inventions and not to limit the scope of the disclosure. The embodiments described herein e.

Further, the circuitry described below can be fabricated using an integrated bipolar-field effect transistor BIFET process utilizing the lower turn-on voltage of FET transistors. Further, in particular embodiments, the transistors described below comprise bipolar junction transistors referred to as a BJT , which includes heterojunction bipolar junction transistors referred to as an HBT and field effect transistors referred to as a FET that are fabricated using what is referred to as the bipolar complementary metal oxide semiconductor BICMOS process.

The circuit and method for biasing a gallium arsenide GaAs power amplifier are generally implemented in hardware. However, one or more of the signals that control the circuit and method for biasing a gallium arsenide GaAs power amplifier can be implemented in software, or a combination of hardware and software. When implemented in hardware, the circuit and method for biasing a gallium arsenide GaAs power amplifier can be implemented using specialized hardware elements.

When one or more of the control signals for the circuit and method for biasing a gallium arsenide GaAs power amplifier are generated at least partially in software, the software portion can be used to precisely control the operating aspects of various components in a bias circuit associated with a device. The software can be stored in a memory and executed by a suitable instruction execution system microprocessor. The hardware embodiment of the circuit and method for biasing a gallium arsenide GaAs power amplifier can include any or a combination of the following technologies, which are all well known in the art: discrete electronic components, discrete logic circuit s having logic gates for implementing logic functions upon data signals, an application specific integrated circuit having appropriate logic gates, a programmable gate array s PGA , a field programmable gate array FPGA , a separate, specially designed integrated circuit for biasing purposes, etc.


  1. North-South and South-South: Essays on International Economics?
  2. Born into the Children of God: My life in a religious sex cult and my struggle for survival on the outside!
  3. Advancing Formative Assessment in Every Classroom: A Guide for Instructional Leaders?
  4. ISBN 13: 9787111160557!
  5. Radio-Frequency Electronics: Circuits and Applications [FULL]?

The software for the circuit and method for biasing a gallium arsenide GaAs power amplifier comprises an ordered listing of executable instructions for implementing logical functions, and can be embodied in any computer-readable medium for use by or in connection with an instruction execution system, apparatus, or device, such as a computer-based system, processor-containing system, or other system that can fetch the instructions from the instruction execution system, apparatus, or device and execute the instructions.

The circuit block diagram illustrated in FIG. Each of the mirror circuits a - f can provide bias voltage to one or more RF devices e. The RF devices that receive bias voltage from one of the mirror circuits a - f can operate in low or high frequency bands. In various embodiments, the RF devices can be operated in low power mode. In various embodiments, the phone board may also include filters and duplexers in the circuit path between the semiconductor module and the switch In various embodiments, the current mirror circuit is similar to the mirror circuits a - f of FIG.

In various embodiments, the current mirror circuit is implemented in gallium arsenide GaAs material system. The particular embodiment of the current mirror circuit illustrated in FIG. In various embodiments, the transistor can be a bipolar junction transistor BJT which includes a heterojunction bipolar transistor HBT. The transistor and the FET of the current mirror portion are arranged such that the collector terminal of the transistor is connected to the gate terminal of the FET A reference voltage applied to the input terminal is provided to the collector terminal of the transistor and the gate terminal of the FET via one or more resistors and The emitter terminal of the transistor is connected to the ground.

In various embodiments, the source terminal of the FET is also connected to the ground through a FET current source and a diode In various embodiments, the collector terminal and the base terminal of the transistor can be connected to each other via an electrical path which includes a resistor and a capacitor The output terminal is connected to the source terminal of the FET In various embodiments, the transistor mirrors one or more devices e. In various embodiments, the current through the transistor is determined by the voltage Vref applied at the input terminal and the resistors and If the voltage Vref at the input terminal is a precision voltage, then the current through the transistor is a precision current.

One purpose of the current mirror circuit is to force a precision current through the transistor which is mirrored at the output terminal The applied reference voltage together with the resistors and forms a precision current source. In various embodiments, the resistor can be a temperature dependent resistor whose resistance is proportional to the temperature e.

In various embodiments, the resistor can be a temperature independent resistor whose resistance remains substantially the same with variation in the temperature of the circuit or the resistor. Including a temperature dependent resistor can be advantageous in maintaining a substantially constant current flowing through the transistor For example, in various embodiments, the voltage input at terminal can be a precision reference voltage that includes a component that is proportional to the absolute temperature. In such implementations, if the value of the resistor can be configured to increase with temperature, then a substantially uniform current can be maintained through the device In various embodiments, terminal is configured to be connected to a battery.

To turn the mirror circuit off terminal is allowed to float at a voltage of 1 V DC or less. When the terminal is allowed to float, the current source dominates and pulls the gate of the FET to ground, while the transistor is off because the voltage at the base of the transistor is less than the required turn-on voltage which is approximately 1. The source of the FET is maintained at approximately 0. As a result, the gate of FET is maintained at a voltage of 0. Accordingly, FET is also off thereby turning the mirror circuit off. In various embodiments, the voltage reference circuit can be implemented in GaAs material system.

In various embodiments, it is advantageous for the voltage reference circuit to rely on the band-gap of the devices used and a voltage proportional to absolute temperature to generate precision voltages instead of using resistors. The embodiments of voltage reference circuits illustrated in FIGS. In various embodiments, the voltage reference circuit can be a simplified version of the voltage reference circuit In various embodiments, the voltage reference circuit illustrated in FIG. As illustrated in FIG. The enable switch includes a third FET In various embodiments, output of the master enable circuit e.

Radio-frequency electronics : circuits and applications in SearchWorks catalog

In various embodiments, the enable switch can be toggled between on and off states by controlling the voltage applied to the gate of the FET FETs fabricated on a GaAs platform will turn-off when the gate voltage is approximately 0. The voltage reference circuit is in feedback wherein the current source is connected to the gate of the FET The source of the FET is connected to the base of the transistor The emitter terminal of the transistor is connected to ground.

In one particular embodiment where the voltage reference circuit is implemented in GaAs material system, the voltage difference between the base of the transistor and the emitter of the transistor is 1. In that particular embodiment, the source of the FET is also at 1.

Without any loss of generality absolute temperature is temperature in degree Kelvin. The voltage reference circuit of FIG. The circuit portions , and provide a voltage proportional to the absolute temperature. The circuit portion includes a transistor e. The circuit portion includes resistors and The circuit portion is connected such that the drain of the FET is connected to the drain of the FET and the collector of the transistor is connected to the gate of the FET The circuit portion is connected such that the resistors and are included in the circuit path between the source of the FET and the gate of the FET The circuit portion is connected such that the source of the FET and the collector of the transistor are connected together.

go site The emitter terminals of the transistors and are connected to a common node The emitter terminal of the transistor is connected to the common node via the resistor In various embodiments, the potential at the common node can be maintained at an electrical ground.

The circuit is designed such that the value of the current I 1 flowing through the branch B 1 is proportional to the value of the current I 2 flowing through the branch B 2. In various embodiments, the ratio of the current densities in devices and can be In some embodiments the ratio of the current densities in devices and can be , or In various embodiments, the current densities can be controlled by controlling the area of the devices through which the current flows or the ratios between the resistor and the sum of the resistors and For example, in some embodiments the areas of the devices and can be changed to control the current densities.

As another example, in various embodiments, the values of the resistors , and are chosen such that the ratio between resistors and series combination of resistors and is fixed. In various embodiments, the fixed ratio can be 10, 20, 50 or The voltage reference circuit illustrated in FIG. In various embodiments, the module is an alternate embodiment of the enable switch described above. The module includes FETs and In various embodiments, a control circuit e. In various embodiments, a power supply unit e. In various embodiments, the battery or the power supply unit is configured to provide approximately V.